Nanocrystalline Silicon and Field Emission Display Devices

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Single Electron Devices Based on Nanocrystalline Silicon

nano-crystalline Si dots of dimensions of 8nm have been incorporated into a variety of Coulomb blockade and floating gate memory devices. Structures include vertical transistor, planar electrode, nanoscale channel junction and 2-gate trench structure. Ballistic transport, Coulomb oscillation and memory effects are clearly demonstrated

متن کامل

Graphene field emission devices

Articles you may be interested in Enhanced field emission properties of doped graphene nanosheets with layered SnS2 Appl. Graphene as anode electrode for colloidal quantum dots based light emitting diodes Appl.

متن کامل

Nanocrystalline silicon superlattices: building blocks for quantum devices

A nanocrystalline silicon superlattice (nc-Si SLs) is a structure consisting of Si nanocrystal layers separated by nanometer-thick SiO2. A long range order in the nc-Si SL is obtained along the direction of growth by periodically alternating layers of Si nanocrystals and SiO2. A number of characterization techniques such as transmission electron microscopy (TEM) and atomic force microscopy (AFM...

متن کامل

Diamond vacuum field emission devices

This article reports the development of (a) vertical and (b) lateral diamond vacuum field emission devices with excellent field emission characteristics. These diamond field emission devices, diode and triode, were fabricated using a self-aligning gate formation technique from silicon-on-insulator wafers using conventional siliconmicropatterning and etching techniques. High emission current N0....

متن کامل

Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices*

Powder formation in silane plasmas has been considered as a technology drawback because it might lead to the formation of macroscopic defects in the deposited layers. Here we summarize our recent efforts in controlling the formation of powder precursors, in particular, nanocrystalline silicon particles, aiming at their incorporation in the films. Indeed, the incorporation of clusters and crysta...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Shinku

سال: 2006

ISSN: 0559-8516,1880-9413

DOI: 10.3131/jvsj.49.757